Cypress CY62158EV30 Manuel d'utilisateur

8-Mbit (1024K x 8) Static RAMCY62158EV30 MoBL®Cypress Semiconductor Corporation • 198 Champion Court • San Jose, CA 95134-1709 • 408-943-2600Document

CY62158EV30 MoBL®Document #: 38-05578 Rev. *D Page 10 of 11© Cypress Semiconductor Corporation, 2004-2007. The information contained herein is subjec

CY62158EV30 MoBL®Document #: 38-05578 Rev. *D Page 11 of 11Document History PageDocument Title: CY62158EV30 MoBL®, 8-Mbit (1024K x 8) Static RAMDocum

CY62158EV30 MoBL®Document #: 38-05578 Rev. *D Page 2 of 11Pin Configurations [3]Product PortfolioProductVCC Range (V)Speed (ns)Power DissipationOpera

CY62158EV30 MoBL®Document #: 38-05578 Rev. *D Page 3 of 11Maximum RatingsExceeding the maximum ratings may impair the useful life ofthe device. These

CY62158EV30 MoBL®Document #: 38-05578 Rev. *D Page 4 of 11Thermal Resistance[9]Parameter Description Test Conditions BGA TSOP II UnitΘJAThermal Resis

CY62158EV30 MoBL®Document #: 38-05578 Rev. *D Page 5 of 11Switching Characteristics (Over the Operating Range)[11]Parameter Description45 nsUnitMin M

CY62158EV30 MoBL®Document #: 38-05578 Rev. *D Page 6 of 11Switching WaveformsRead Cycle No. 1 (Address Transition Controlled)[15, 16]Read Cycle No. 2

CY62158EV30 MoBL®Document #: 38-05578 Rev. *D Page 7 of 11Write Cycle No. 1 (WE Controlled)[14, 18, 19]Write Cycle No. 2 (CE1 or CE2 Controlled)[14,

CY62158EV30 MoBL®Document #: 38-05578 Rev. *D Page 8 of 11Write Cycle No. 3 (WE Controlled, OE LOW)[19]Truth TableCE1CE2WE OE Inputs/Outputs Mode Pow

CY62158EV30 MoBL®Document #: 38-05578 Rev. *D Page 9 of 11Package DiagramsFigure 1. 48-Ball VFBGA (6 x 8 x 1 mm), 51-85150A1A1 CORNER0.750.75Ø0.30±0.