Cypress CY8CNP102B Manuel d'utilisateur télécharger pdf (Page 18)

PRELIMINARY CY8CNP102B, CY8CNP102E

Document #: 001-43991 Rev. *D Page 18 of 38

In the following table, t

HRECALL

starts from the time Vcc rises above V

SWITCH.

If an SRAM WRITE has not taken place since the last

nonvolatile cycle, no STORE occurs. Industrial grade devices require 15 ms maximum.

AC General Purpose IO Specifications

Table 15.3.3V nvSRAM AutoStore/Power Up RECALL (CY8CNP102B)

Parameter Description

nvSRAM

Unit

Min Max

HRECALL

Power Up RECALL Duration 20 ms

STORE

STORE Cycle Duration 12.5 ms

SWITCH

Low Voltage Trigger Level 2.65 V

VccRISE

VCC Rise Time 150 μs

Table 16. 3.3V AC GPIO Specifications (CY8CNP102B)

Symbol Description Min Typ Max Units Notes

GPIO

GPIO Operating Frequency 0 – 12.3 MHz Normal Strong Mode

TRiseS Rise Time, Slow Strong Mode, Cload = 50 pF 10 27 – ns Vcc = 3V to 3.6V

10% - 90%

TFallS Fall Time, Slow Strong Mode, Cload = 50 pF 10 22 – ns Vcc = 3V to 3.6V

10% - 90%

Figure 6. GPIO Timing Diagram

TFallF

TFallS

TRiseF

TRiseS

90%

10%

GPIO

Output

Voltage

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Cypress CY8CNP102B Manuel d'utilisateur Page 18