Cypress CY7C1336H Manuel d'utilisateur

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PRELIMINARY
2-Mbit (64K x 32) Flow-Through Sync SRAM
CY7C1336H
Cypress Semiconductor Corporation 198 Champion Court San Jose, CA 95134-1709 408-943-2600
Document #: 001-00210 Rev. *A Revised February 6, 2006
Features
64K x 32 common I/O
3.3V core power supply
3.3V I/O supply
Fast clock-to-output times
6.5 ns (133-MHz version)
8.0 ns (100-MHz version)
Provide high-performance 2-1-1-1 access rate
User-selectable burst counter supporting Intel
®
Pentium
®
interleaved or linear burst sequences
Separate processor and controller address strobes
Synchronous self-timed write
Asynchronous output enable
Supports 3.3V I/O level
Offered in JEDEC-standard lead-free 100-pin TQFP
package
“ZZ” Sleep Mode option
Functional Description
[1]
The CY7C1336H is a 64K x 32 synchronous cache RAM
designed to interface with high-speed microprocessors with
minimum glue logic. Maximum access delay from clock rise is
6.5 ns (133-MHz version). A 2-bit on-chip counter captures the
first address in a burst and increments the address automati-
cally for the rest of the burst access. All synchronous inputs
are gated by registers controlled by a positive-edge-triggered
Clock Input (CLK). The synchronous inputs include all
addresses, all data inputs, address-pipelining Chip Enable
(CE
1
), depth-expansion Chip Enables (CE
2
and
CE
3
), Burst
Control inputs (ADSC
, ADSP,
and
ADV), Write Enables
(BW
[A:D]
, and BWE), and Global Write (GW). Asynchronous
inputs include the Output Enable (OE) and the ZZ pin.
The CY7C1336H allows either interleaved or linear burst
sequences, selected by the MODE input pin. A HIGH selects
an interleaved burst sequence, while a LOW selects a linear
burst sequence. Burst accesses can be initiated with the
Processor Address Strobe (ADSP
) or the cache Controller
Address Strobe (ADSC
) inputs. Address advancement is
controlled by the Address Advancement (ADV) input.
Addresses and chip enables are registered at rising edge of
clock when either Address Strobe Processor (ADSP) or
Address Strobe Controller (ADSC
) are active. Subsequent
burst addresses can be internally generated as controlled by
the Advance pin (ADV
).
The CY7C1336H operates from a +3.3V core power supply
while all outputs may operate with a +3.3V supply. All inputs
and outputs are JEDEC-standard JESD8-5-compatible.
Note:
1. For best-practices recommendations, please refer to the Cypress application note System Design Guidelines on www.cypress.com.
ADDRESS
REGISTER
BURST
COUNTER
AND LOGIC
CLR
Q1
Q0
ENABLE
REGISTER
SENSE
AMPS
OUTPUT
BUFFERS
INPUT
REGISTERS
MEMORY
ARRAY
MODE
A
[1:0]
ZZ
DQ
s
A
0, A1, A
ADV
CLK
ADSP
ADSC
BW
D
BW
C
BW
B
BW
A
BWE
CE1
CE2
CE3
OE
GW
SLEEP
CONTROL
DQ
A
BYTE
WRITE REGISTER
DQ
B
BYTE
WRITE REGISTER
DQ
C
BYTE
WRITE REGISTER
BYTE
WRITE REGISTER
DQ
D
BYTE
WRITE REGISTER
DQ
D
BYTE
WRITE REGISTER
DQ
C
BYTE
WRITE REGISTER
DQ
B
BYTE
WRITE REGISTER
DQ
A
BYTE
WRITE REGISTER
L
og
i
c
Bl
oc
k
Di
agram
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Résumé du contenu

Page 1 - CY7C1336H

PRELIMINARY2-Mbit (64K x 32) Flow-Through Sync SRAMCY7C1336HCypress Semiconductor Corporation • 198 Champion Court • San Jose, CA 95134-1709 • 408-943

Page 2

PRELIMINARYCY7C1336HDocument #: 001-00210 Rev. *A Page 10 of 15Timing Diagrams Read Cycle Timing[16]Note: 16. On this diagram, when CE is LOW, CE1 is

Page 3

PRELIMINARYCY7C1336HDocument #: 001-00210 Rev. *A Page 11 of 15Write Cycle Timing[16, 17]Note: 17.Full width Write can be initiated by either GW LOW;

Page 4

PRELIMINARYCY7C1336HDocument #: 001-00210 Rev. *A Page 12 of 15Read/Write Timing[16, 18, 19]Notes: 18. The data bus (Q) remains in High-Z following a

Page 5

PRELIMINARYCY7C1336HDocument #: 001-00210 Rev. *A Page 13 of 15ZZ Mode Timing[20, 21] Notes: 20. Device must be deselected when entering ZZ mode. See

Page 6

PRELIMINARYCY7C1336HDocument #: 001-00210 Rev. *A Page 14 of 15© Cypress Semiconductor Corporation, 2006. The information contained herein is subject

Page 7

PRELIMINARYCY7C1336HDocument #: 001-00210 Rev. *A Page 15 of 15Document History PageDocument Title: CY7C1336H 2-Mbit (64K x 32) Flow-Through Sync SRAM

Page 8

PRELIMINARYCY7C1336HDocument #: 001-00210 Rev. *A Page 2 of 15Selection Guide133 MHz 100 MHz UnitMaximum Access Time 6.5 8.0 nsMaximum Operating Curr

Page 9

PRELIMINARYCY7C1336HDocument #: 001-00210 Rev. *A Page 3 of 15Pin DefinitionsName I/O DescriptionA0, A1, AInput-SynchronousAddress Inputs used to sele

Page 10

PRELIMINARYCY7C1336HDocument #: 001-00210 Rev. *A Page 4 of 15Functional OverviewAll synchronous inputs pass through input registers controlledby the

Page 11

PRELIMINARYCY7C1336HDocument #: 001-00210 Rev. *A Page 5 of 15ZZ Mode Electrical CharacteristicsParameter Description Test Conditions Min. Max. UnitID

Page 12

PRELIMINARYCY7C1336HDocument #: 001-00210 Rev. *A Page 6 of 15Truth Table for Read/Write[2, 3]Function GW BWE BWDBWCBWBBWARead HHXXXXRead HLHHHHWrite

Page 13

PRELIMINARYCY7C1336HDocument #: 001-00210 Rev. *A Page 7 of 15Maximum Ratings(Above which the useful life may be impaired. For user guide-lines, not t

Page 14

PRELIMINARYCY7C1336HDocument #: 001-00210 Rev. *A Page 8 of 15Capacitance[9]Parameter Description Test Conditions100 TQFPMax. UnitCINInput Capacitance

Page 15

PRELIMINARYCY7C1336HDocument #: 001-00210 Rev. *A Page 9 of 15 Switching Characteristics Over the Operating Range[10, 11] Parameter Description133 MHz

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