4-Mbit (256K x 18) Flow-through SRAMwith NoBL™ ArchitectureCY7C1353GCypress Semiconductor Corporation • 198 Champion Court • San Jose, CA 95134-1709 •
CY7C1353GDocument #: 38-05515 Rev. *E Page 10 of 13Switching WaveformsRead/Write Waveforms[19, 20, 21]Notes: 19.For this waveform ZZ is tied low.20.Wh
CY7C1353GDocument #: 38-05515 Rev. *E Page 11 of 13NOP, STALL and DESELECT Cycles[19, 20, 22]ZZ Mode Timing[23,24]Notes: 22.The IGNORE CLOCK EDGE or S
CY7C1353GDocument #: 38-05515 Rev. *E Page 12 of 13© Cypress Semiconductor Corporation, 2004-2007. The information contained herein is subject to cha
CY7C1353GDocument #: 38-05515 Rev. *E Page 13 of 13Document History PageDocument Title: CY7C1353G 4-Mbit (256K x 18) Flow-through SRAM with NoBL™ Arch
CY7C1353GDocument #: 38-05515 Rev. *E Page 2 of 13Selection Guide133 MHz 100 MHz UnitMaximum Access Time 6.5 8.0 nsMaximum Operating Current 225 205
CY7C1353GDocument #: 38-05515 Rev. *E Page 3 of 13Pin Definitions Name IO DescriptionA0, A1, A Input-SynchronousAddress Inputs used to select one of t
CY7C1353GDocument #: 38-05515 Rev. *E Page 4 of 13Functional OverviewThe CY7C1353G is a synchronous flow-through burst SRAMdesigned specifically to el
CY7C1353GDocument #: 38-05515 Rev. *E Page 5 of 13 Linear Burst Address Table (MODE = GND)First AddressA1, A0SecondAddressA1, A0Third AddressA1, A0Fo
CY7C1353GDocument #: 38-05515 Rev. *E Page 6 of 13Partial Truth Table for Read/Write[2, 3, 9]Function WE BWABWBRead HXXWrite – No bytes written L H HW
CY7C1353GDocument #: 38-05515 Rev. *E Page 7 of 13Maximum RatingsExceeding maximum ratings may impair the useful life of thedevice. These user guideli
CY7C1353GDocument #: 38-05515 Rev. *E Page 8 of 13 .Capacitance[12]Parameter Description Test Conditions100 TQFPMax UnitCINInput Capacitance TA = 25°C
CY7C1353GDocument #: 38-05515 Rev. *E Page 9 of 13Switching Characteristics Over the Operating Range[17, 18]Parameter Description–133 –100 UnitMin Max
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