Cypress MoBL CY62148BN Manuel d'utilisateur

4-Mbit (512K x 8) Static RAMCY62148BN MoBL®Cypress Semiconductor Corporation • 198 Champion Court • San Jose, CA 95134-1709 • 408-943-2600Document #:

CY62148BN MoBL®Document #: 001-06517 Rev. *A Page 10 of 10Document History PageDocument Title: CY62148BN MoBL® 4-Mbit (512K x 8) Static RAMDocument N

CY62148BN MoBL®Document #: 001-06517 Rev. *A Page 2 of 10Note: 1. Typical values are measured at VCC = 5V, TA = 25°C, and are included for reference

CY62148BN MoBL®Document #: 001-06517 Rev. *A Page 3 of 10Maximum Ratings(Above which the useful life may be impaired. For user guide-lines, not teste

CY62148BN MoBL®Document #: 001-06517 Rev. *A Page 4 of 10Switching Characteristics[5] Over the Operating RangeParameter Description62148BNLL-70UnitMi

CY62148BN MoBL®Document #: 001-06517 Rev. *A Page 5 of 10Data Retention Characteristics (Over the Operating Range)Parameter Description Conditions Mi

CY62148BN MoBL®Document #: 001-06517 Rev. *A Page 6 of 10Write Cycle No. 1 (CE Controlled)[13]Write Cycle No. 2 (WE Controlled, OE HIGH During Write)

CY62148BN MoBL®Document #: 001-06517 Rev. *A Page 7 of 10Write Cycle No.3 (WE Controlled, OE LOW)[13, 14]Truth TableCE OE WE I/O0–I/O7Mode PowerH X X

CY62148BN MoBL®Document #: 001-06517 Rev. *A Page 8 of 10Package Diagrams0.546[13.868]0.440[11.176]0.101[2.565]0.050[1.270]0.014[0.355]0.118[2.997]0.

CY62148BN MoBL®Document #: 001-06517 Rev. *A Page 9 of 10© Cypress Semiconductor Corporation, 2006. The information contained herein is subject to c