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Cypress CY62136VN Manuel d'utilisateur

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2-Mbit (128K x 16) Static RAM
CY62136VN MoBL
®
Cypress Semiconductor Corporation • 198 Champion Court • San Jose, CA 95134-1709 • 408-943-2600
Document #: 001-06510 Rev. *A Revised August 3, 2006
Features
• Temperature Ranges
— Industrial: –40°C to 85°C
— Automotive-A: –40°C to 85°C
— Automotive-E: –40°C to 125°C
• High speed: 55 ns
• Wide voltage range: 2.7V–3.6V
• Ultra-low active, standby power
• Easy memory expansion with CE
and OE features
• TTL-compatible inputs and outputs
• Automatic power-down when deselected
• CMOS for optimum speed/power
• Available in standard Pb-free 44-pin TSOP Type II,
Pb-free and non Pb-free 48-ball FBGA packages
Functional Description
[1]
The CY62136VN is a high-performance CMOS static RAM
organized as 128K words by 16 bits. This device features
advanced circuit design to provide ultra-low active current.
This is ideal for providing More Battery Life™ (MoBL
®
) in
portable applications such as cellular telephones. The device
also has an automatic power-down feature that significantly
reduces power consumption by 99% when addresses are not
toggling. The device can also be put into standby mode when
deselected (CE
HIGH). The input/output pins (I/O
0
through
I/O
15
) are placed in a high-impedance state when: deselected
(CE
HIGH), outputs are disabled (OE HIGH), BHE and BLE
are disabled (BHE, BLE HIGH), or during a write operation (CE
LOW, and WE LOW).
Writing to the device is accomplished by taking Chip Enable
(CE
) and Write Enable (WE) inputs LOW. If Byte Low Enable
(BLE
) is LOW, then data from I/O pins (I/O
0
through I/O
7
), is
written into the location specified on the address pins (A
0
through A
16
). If Byte High Enable (BHE) is LOW, then data
from I/O pins (I/O
8
through I/O
15
) is written into the location
specified on the address pins (A
0
through A
16
).
Reading from the device is accomplished by taking Chip
Enable (CE
) and Output Enable (OE) LOW while forcing the
Write Enable (WE
) HIGH. If Byte Low Enable (BLE) is LOW,
then data from the memory location specified by the address
pins will appear on I/O
0
to I/O
7
. If Byte High Enable (BHE) is
LOW, then data from memory will appear on I/O
8
to I/O
15
. See
the Truth Table at the back of this data sheet for a complete
description of read and write modes.
Note:
1. For best practice recommendations, please refer to the Cypress application note “System Design Guidelines” on http://www.cypress.com.
Logic Block Diagram
128K x 16
RAM Array
I/O
0
– I/O
7
ROW DECODER
A
8
A
7
A
6
A
5
A
2
COLUMN DECODER
A
11
A
12
A
13
A
14
A
15
SENSE AMPS
DATA IN DRIVERS
OE
A
4
A
3
I/O
8
– I/O
15
CE
WE
BLE
BHE
A
16
A
0
A
1
A
9
A
10
WE
1
2
3
4
5
6
7
8
9
10
11
14
31
32
36
35
34
33
37
40
39
38
Top View
TSOP II (Forward)
12
13
41
44
43
42
16
15
29
30
V
CC
A
16
A
15
A
14
A
13
A
12
A
4
A
3
OE
V
SS
A
5
I/O
15
A
2
CE
I/O
2
I/O
0
I/O
1
BHE
NC
A
1
A
0
18
17
20
19
I/O
3
27
28
25
26
22
21
23
24
NC
V
SS
I/O
6
I/O
4
I/O
5
I/O
7
A
6
A
7
BLE
V
CC
I/O
14
I/O
13
I/O
12
I/O
11
I/O
10
I/O
9
I/O
8
A
8
A
9
A
10
A
11
Pin Configurations
[3]
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Résumé du contenu

Page 1 - CY62136VN MoBL

2-Mbit (128K x 16) Static RAMCY62136VN MoBL®Cypress Semiconductor Corporation • 198 Champion Court • San Jose, CA 95134-1709 • 408-943-2600Document

Page 2

CY62136VN MoBL®Document #: 001-06510 Rev. *A Page 10 of 12Ordering InformationSpeed(ns) Ordering CodePackageDiagram Package TypeOperatingRange55 CY62

Page 3

CY62136VN MoBL®Document #: 001-06510 Rev. *A Page 11 of 12© Cypress Semiconductor Corporation, 2006. The information contained herein is subject to

Page 4 - OUTPUT V

CY62136VN MoBL®Document #: 001-06510 Rev. *A Page 12 of 12Document History PageDocument Title: CY62136VN MoBL® 2-Mbit (128K x 16) Static RAMDocument

Page 5

CY62136VN MoBL®Document #: 001-06510 Rev. *A Page 2 of 12Product Portfolio ProductVCC Range (V)Speed RangesPower DissipationOperating, ICC (mA) Stand

Page 6

CY62136VN MoBL®Document #: 001-06510 Rev. *A Page 3 of 12Maximum Ratings(Above which the useful life may be impaired. For user guide-lines, not teste

Page 7

CY62136VN MoBL®Document #: 001-06510 Rev. *A Page 4 of 12Thermal Resistance[6] Parameter Description Test Conditions TSOPII FBGA UnitΘJAThermal Resis

Page 8

CY62136VN MoBL®Document #: 001-06510 Rev. *A Page 5 of 12Switching Characteristics Over the Operating Range[9]Parameter Description55 ns 70 ns UnitM

Page 9

CY62136VN MoBL®Document #: 001-06510 Rev. *A Page 6 of 12 Switching Waveforms Read Cycle No. 1[14, 15]Read Cycle No. 2[15, 16]Notes: 14. Device is co

Page 10

CY62136VN MoBL®Document #: 001-06510 Rev. *A Page 7 of 12Write Cycle No. 1 (WE Controlled)[12, 17, 18]Write Cycle No. 2 (CE Controlled)[12, 17, 18]No

Page 11

CY62136VN MoBL®Document #: 001-06510 Rev. *A Page 8 of 12Write Cycle No. 3 (WE Controlled, OE LOW)[13, 18]Write Cycle No. 4 (BHE/BLE Controlled, OE L

Page 12

CY62136VN MoBL®Document #: 001-06510 Rev. *A Page 9 of 12 Typical DC and AC Characteristics303525151051.01.92.83.7020 ISB (µA)1.21.41.00.60.40.21.7 2

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